si2301ads vishay siliconix new product document number: 71835 s-20617?rev. b, 29-apr-02 www.vishay.com 1 p-channel 2.5-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) b 0.130 @ v gs = ?4.5 v ?2.0 ?20 0.190 @ v gs = ?2.5 v ?1.6 g to-236 (sot-23) s d top view 2 3 1 si2301ds (1a)* *marking code absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 8 v t a = 25 c ?2.0 ?1.75 continuous drain current (t j = 150 c) b t a = 70 c i d ?1.6 ?1.4 pulsed drain current a i dm ?10 a continuous source current (diode conduction) b i s ?0.75 ?0.6 t a = 25 c 0.9 0.7 power dissipation b t a = 70 c p d 0.57 0.45 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b 115 140 maximum junction-to-ambient c r thja 140 175 c/w notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 5 sec. c. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
si2301ads vishay siliconix new product www.vishay.com 2 document number: 71835 s-20617 ? rev. b, 29-apr-02 specifications (t j = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 gate-threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 ? 0.95 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 16 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 55 c ? 10 a v ds ? 5 v, v gs = ? 4.5 v ? 6 on-state drain current a i d(on) v ds ? 5 v, v gs = ? 2.5 v ? 3 a v gs = ? 4.5 v, i d = ? 2.8 a 0.093 0.130 drain-source on-resistance a r ds(on) v gs = ? 2.5 v, i d = ? 2.0 a 0.140 0.190 forward transconductance a g fs v ds = ? 5 v, i d = ? 2.8 a 6.5 s diode forward voltage v sd i s = ? 0.75 a, v gs = 0 v ? 0.80 ? 1.2 v dynamic b total gate charge q g 4.2 10 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v i d ? 2.8 a 0.8 nc gate-drain charge q gd i d ? 2.8 a 0.8 input capacitance c iss 500 output capacitance c oss v ds = ? 6 v, v gs = 0, f = 1 mhz 115 pf reverse transfer capacitance c rss 62 switching c t d(on) 6 25 turn-on time t r v dd = ? 6 v, r l = 6 30 60 t d(off) i d ? 1.0 a, v gen = ? 4.5 v r g = 6 25 70 ns turn-off time t f 10 60 notes a. pulse test: pw 300 s duty cycle 2%. b. for design aid only, not subject to production testing. c. switching time is essentially independent of operating temperature. faxback 408-970-5600
si2301ads vishay siliconix new product document number: 71835 s-20617 ? rev. b, 29-apr-02 www.vishay.com 3 typical characteristics (25 c unless noted) on-resistance vs. drain current output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 2 4 6 8 10 012345 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = ? 55 c 125 c 0, 0.5, 1 v 2.5 v v gs = 5, 4.5, 4, 3.5, 3 v 1.5 v 2 v 0 200 400 600 800 048121620 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 3.6 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 3.6 a t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c
si2301ads vishay siliconix new product www.vishay.com 4 document number: 71835 s-20617 ? rev. b, 29-apr-02 typical characteristics (25 c unless noted) t j = 150 c 0 2 4 6 8 10 0.01 0.10 1.00 10.00 100.00 1000.00 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j ? temperature ( c) time (sec) power (w) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 ? 0.2 ? 0.1 0.0 0.1 0.2 0.3 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 3.6 a i d = 250 a variance (v) v gs(th) 10 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0.1 t j = 25 c 1 100
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